PAT. No.

Title

1

7,532,505

Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements

2

7,531,882

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

3

7,518,835

Magnetic elements having a bias field and magnetic memory devices using the magnetic elements

4

7,515,457

Current driven memory cells having enhanced current and enhanced current symmetry

5

7,502,249

Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements

6

7,495,303

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

7

7,489,541

Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

8

7,486,552

Method and system for providing a spin transfer device with improved switching characteristics

9

7,486,551

Magnetic element using domain-wall assisted switching of magnetization and MRAM devices using the magnetic element

10

7,430,135

Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

11

7,379,327

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins

12

7,369,427

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

13

7,345,912

Method and system for providing a magnetic memory structure utilizing spin transfer

14

7,289,356

Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein

15

7,286,395

Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells

16

7,282,755

Stress assisted current driven switching for magnetic memory applications

17

7,272,035

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

18

7,272,034

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

19

7,245,462

Magnetoresistive element having reduced spin transfer induced noise

20

7,242,048

Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

21

7,242,045

Spin transfer magnetic element having low saturation magnetization free layers

22

7,241,631

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

23

7,233,039

Spin transfer magnetic elements with spin depolarization layers

24

7,230,845

Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices

25

7,227,773

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

26

7,224,601

Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element

27

7,190,612

Circuitry for use in current switching a magnetic cell

28

7,190,611

Spin-transfer multilayer stack containing magnetic layers with resettable magnetization

29

7,187,577

Method and system for providing current balanced writing for memory cells and magnetic devices

30

7,161,829

Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements

31

7,126,202

Spin scattering and heat assisted switching of a magnetic element

32

7,110,287

Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer

33

7,106,624

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

34

7,098,494

Re-configurable logic elements using heat assisted magnetic tunneling elements

35

7,088,609

Spin barrier enhanced magneto-resistance effect element and magnetic memory using the same

36

7,057,921

Spin barrier enhanced dual magneto-resistance effect element and magnetic memory using the same

37

7,009,877

Three-terminal magneto-statically coupled spin transfer-based MRAM cell

38

6,992,359

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

39

6,985,385

Magnetic memory element utilizing spin transfer switching and storing multiple bits

40

6,967,863

Perpendicular magnetization magnetic element utilizing spin transfer

41

6,958,927

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

42

6,933,155

Methods for providing a sub .15 micron magnetic memory structure

43

6,920,063

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

44

6,888,742

Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element

45

6,847,547

Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

46

6,838,740

Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

47

6,829,161

Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

48

6,714,444

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element