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Grandis in the Leading Electronics Press
Events
MTJ Fab Opening

July 21st, 2010
Grandis hires industry veteran to drive development and commercialization of STT-RAM

June 18th, 2010
Grandis awarded Phase II of prestigous DARPA contract

April 30th, 2009
Grandis awarded seven key STT-RAM patents

February 5th, 2009
Grandis Inc. announces the first 300mm MTJ fabrication facility in the United States

October 28, 2008
Grandis awarded prestigious DARPA contract by department of defense to develop STT-RAM

April 1, 2008
Hynix and Grandis sign license and joint development agreement on spin-transfer torque MRAM (STT-RAM)

October 09, 2007
Grandis awarded National Institute of Standards and Technology (NIST) grant for next-generation memory development

September 11, 2007
Grandis receives Frost & Sullivan Technology Innovation award for next-generation memory technology.

July 10, 2007
Grandis expands next-generation magnetic memory patent portfolio.

July 2, 2007
Grandis awarded National Science Foundation grant for next-generation memory development.

May 18, 2007
Grandis, Inc. announces MTJ Fab in Silicon Valley for STT-RAM technology.

May 9, 2007
Grandis awarded three key STT-RAM patents.

March 12, 2007
Grandis Inc., awarded phase II National Science Foundation grant for STT-RAM chip development.

January 26, 2007
Farhad Tabrizi, semiconductor memory veteran, named president and CEO at Grandis, Inc.

May 23, 2006
Singulus Technologies receives order for TIMARIS system, reaches collaborative agreement with Grandis on TMR film development for MRAM

December 1, 2005
Renesas Technology and Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer

     
 
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