Grandis' Fab for MTJ development and characterization was officially opened on May 22nd, 2007.

Grandis' new MTJ (magnetic tunnel junction) Fab was formally unveiled at an opening ceremony on May 22nd, 2007. A multi-million dollar investment incorporating state-of-the-art magnetic thin-film deposition, annealing, and characterization equipment, it is the first MTJ Fab in the United States dedicated to STT-RAM memory technology. The MTJ Fab enables new Grandis STT-RAM technology licensees to build Grandis' MTJ structures on their CMOS wafers, accelerate their STT-RAM development, and reduce their time-to-market. It also enables Grandis to conduct leading-edge research and development on new magnetic materials and MTJ structures that can subsequently be transferred to licensees' production fabs.

View pictures of the Fab opening ceremony.

Companies represented at the Fab Opening Ceremony